Samsung China Semiconductor's Ground Breaking Ceremony : News Photo

Samsung China Semiconductor's Ground Breaking Ceremony

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ChinaFotoPress / Contributor
XI AN, CHINA - SEPTEMBER 12: (CHINA OUT) Diggers are seen during the Samsung China Semiconductor's groundbreaking ceremony for a new advanced memory fabrication line at Xi'an Hi-Tech Industrial Development Zone on September 12, 2012 in Xi An, China. Samsung Electronics Co. Ltd started construction on its new memory chip plant Wednesday, with first phase investment of 7 billion U.S. dollars. (Photo by ChinaFotoPress/ChinaFotoPress via Getty Images)
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XI AN, CHINA - SEPTEMBER 12: (CHINA OUT) Diggers are seen during the Samsung China Semiconductor's groundbreaking ceremony for a new advanced memory fabrication line at Xi'an Hi-Tech Industrial Development Zone on September 12, 2012 in Xi An, China. Samsung Electronics Co. Ltd started construction on its new memory chip plant Wednesday, with first phase investment of 7 billion U.S. dollars. (Photo by ChinaFotoPress/ChinaFotoPress via Getty Images)
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Date created:
September 12, 2012
Editorial #:
151949863
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ChinaFotoPress
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Diggers are seen during the Samsung China Semiconductor's... News Photo 151949863Advance,Business,Ceremony,China,Corporate Business,Earth Mover,Finance,Groundbreaking,Horizontal,Line,Manufacturing,Memory,New,Technology,Xi'anPhotographer Collection: ChinaFotoPress 2012 ChinaFotoPressXI AN, CHINA - SEPTEMBER 12: (CHINA OUT) Diggers are seen during the Samsung China Semiconductor's groundbreaking ceremony for a new advanced memory fabrication line at Xi'an Hi-Tech Industrial Development Zone on September 12, 2012 in Xi An, China. Samsung Electronics Co. Ltd started construction on its new memory chip plant Wednesday, with first phase investment of 7 billion U.S. dollars. (Photo by ChinaFotoPress/ChinaFotoPress via Getty Images)