Samsung China Semiconductor's Ground Breaking Ceremony : News Photo

Samsung China Semiconductor's Ground Breaking Ceremony

XI AN, CHINA - SEPTEMBER 12: (CHINA OUT) Diggers are seen during the Samsung China Semiconductor's groundbreaking ceremony for a new advanced memory fabrication line at Xi'an Hi-Tech Industrial Development Zone on September 12, 2012 in Xi An, China. Samsung Electronics Co. Ltd started construction on its new memory chip plant Wednesday, with first phase investment of 7 billion U.S. dollars. (Photo by ChinaFotoPress/ChinaFotoPress via Getty Images)
Caption:
XI AN, CHINA - SEPTEMBER 12: (CHINA OUT) Diggers are seen during the Samsung China Semiconductor's groundbreaking ceremony for a new advanced memory fabrication line at Xi'an Hi-Tech Industrial Development Zone on September 12, 2012 in Xi An, China. Samsung Electronics Co. Ltd started construction on its new memory chip plant Wednesday, with first phase investment of 7 billion U.S. dollars. (Photo by ChinaFotoPress/ChinaFotoPress via Getty Images)
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Date created:
September 12, 2012
Editorial #:
151949858
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ChinaFotoPress / Contributor
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ChinaFotoPress
Credit:
ChinaFotoPress via Getty Images
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4,256 x 2,832 px (14.19 x 9.44 in) - 300 dpi - 2.49 MB
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ChinaFotoPress
Object name:
71335944

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Diggers are seen during the Samsung China Semiconductor's... News Photo 151949858Advance,Business,Ceremony,China,Corporate Business,Earth Mover,Finance,Groundbreaking,Horizontal,Line,Manufacturing,Memory,New,Technology,Xi'anPhotographer Collection: ChinaFotoPress 2012 ChinaFotoPressXI AN, CHINA - SEPTEMBER 12: (CHINA OUT) Diggers are seen during the Samsung China Semiconductor's groundbreaking ceremony for a new advanced memory fabrication line at Xi'an Hi-Tech Industrial Development Zone on September 12, 2012 in Xi An, China. Samsung Electronics Co. Ltd started construction on its new memory chip plant Wednesday, with first phase investment of 7 billion U.S. dollars. (Photo by ChinaFotoPress/ChinaFotoPress via Getty Images)